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| Transistor Small switching (30V, 0.1A) 2SK3019 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. FApplications Interfacing, switching (30V, 100mA) FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FExternal dimensions (Units: mm) FEquivalent circuit 174 Transistor FElectrical characteristics (Ta = 25_C) 2SK3019 FPackaging specifications FElectrical characteristic curves Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature 175 Transistor 2SK3019 Fig.6 Static drain-source on-state resistance vs. gate-source voltage Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Forward transfer admittance vs. drain current Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) 176 Transistor FSwitching characteristics measurement circuit 2SK3019 177 |
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